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AO8830 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8830 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. Standard Product AO8830 is Pbfree (meets ROHS & Sony 259 specifications). AO8830L is a Green Product ordering option. AO8830 and AO8830L are electrically identical.
Features
VDS (V) = 20V ID = 6 A (VGS = 10V) RDS(ON) < 27m (VGS = 10V) RDS(ON) < 30m (VGS = 4.5V) RDS(ON) < 41m (VGS = 2.5V) RDS(ON) < 55m (VGS = 1.8V) ESD Rating: 2000V HBM
D1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 1.6K G2 1.6K
D2
S1
S2
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25C Power Dissipation
A
Maximum 20 12 6 4.8 30 1.5 0.94 -55 to 150
Units V V A
TA=25C TA=70C ID IDM PD TJ, TSTG
TA=70C
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 64 115 70
Max 83 140 85
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO8830 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=10V VDS=0V, IG=250uA VDS=VGS ID=1mA VGS=4.5V, VDS=5V VGS=10V, ID=6A TJ=125C RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=5A VGS=2.5V, ID=4A VGS=1.8V, ID=2A gFS VSD IS Forward Transconductance VDS=5V, ID=6A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 12 0.5 30 22 31 25 32 42 21 0.75 1 2.5 290 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 120 40 1.6 5.2 VGS=4.5V, VDS=10V, ID=6A 2.1 1.9 280 VGS=4.5V, VDS=10V, RL=1.7, RGEN=3 IF=6A, dI/dt=100A/s, VGS=-9V 972 2.35 2.2 25 8 30 41 55 27 0.6 1 Min 20 1 5 10 V V A m m m m S V A pF pF pF k nC nC nC ns ns s s ns nC A Typ Max Units V
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS BVGSO VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate-Source Breakdown Voltage Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/s, VGS=-9V
2
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The currentand power rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 2: Aug 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO8830 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 10V 30 3V 25 4V 20 ID(A) ID(A) VGS =2V 20 15 10 5 0 0 1 2 3 4 5 VDS(Volts) Figure 1: On-Regions Characteristics 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS(Volts) Figure 2: Transfer Characteristics VGS=5V 25C 125C
10
VGS =1.5V
60 Normalize ON-Resistance 50 RDS(ON)(m) 40 30 20 10 0 0 5 10 15 20 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS =4.5V VGS =10V VGS =1.8V VGS =2.5V
1.6 VGS=2.5V 1.4 1.2 ID=4A
VGS=4.5V ID=5A
VGS=10V 1.0 0.8 0.6 -50 0 50 100 150 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=1.8V ID=2A ID=6A
80 70 60 RDS(ON)(m) IS(A) 50 40 30 20 10 0 2 4 6 8 10 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C ID=6A
1E+01 1E+00 1E-01 1E-02 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD(Volts) Figure 6: Body-Diode Characteristics 25C 125C
Alpha & Omega Semiconductor, Ltd.
AO8830 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
400 VDS=10V 4 VGS(Volts) 3 2 1 0 0 1 2 3 4 5 6 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 VDS(Volts) Figure 8: Capacitance Characteristics Ciss Capacitance (pF) 300
5
ID=6A
200 Coss 100 Crss
100 TJ(Max)=150C, TA=25C 10s Power (W) 10 ID (Amps) 1ms 1 RDS(ON) limited 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=83C/W DC 10s
30 25 20 15 10 5 0 0.001 TJ(Max)=150C TA=25C
10ms 100m
0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
0.01
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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